The 2N7002 variant is packaged in a TO-236 surface-mount package. The 2N7000 and BS170 are two different, used for low-power switching applications, with different lead arrangements and current ratings.

FGPF4536 Transistor Datasheet, FGPF4536 Equivalent, PDF Data Sheets. General Description High current capability Using Novel Trench IGBT Technology, Fairchild s new series of Low saturation voltage: VCE (sat) =1.59 V @ IC. Terminal monolithic IC: power MOSFET, PWM controller, high. Capability in a given application depends on thermal environment, transformer design, efficiency required, minimum spec. 97 Data Book and Design Guide or on our Web site.

They are sometimes listed together on the same datasheet with other variants 2N7002, VQ1000J, and VQ1000P. The 2N7000 is a widely available and popular part, often recommended as useful and common components to have around for hobbyist use. The BS250P is 'a good p-channel analog of the 2N7000.' Packaged in a enclosure, both the 2N7000 and BS170 are 60 devices. The 2N7000 can switch 200. The BS170 can switch 500 mA, with a maximum on-resistance of 5 at 10 V Vgs. The 2N7002 is another different part with different resistance, current rating and package.

The 2N7002 is in a TO-236 package, also known as 'small outline transistor' SOT-23, which is the most commonly used three-lead surface-mount package. Applications [ ] The 2N7000 has been referred to as a 'FETlington' and as an 'absolutely ideal hacker part.' The word 'FETlington' is a reference to the -like saturation characteristic. A typical use of these transistors is as a for moderate voltages and currents, including as drivers for small lamps, motors, and relays. Vishay Siliconix datasheet. Retrieved 28 March 2011.

Ally mcbeal season 1 dvd. Ward Silver (2005). • Lucio Di Jasio; Tim Wilmshurst; Dogan Ibrahim (2007). Prasad (1997).

• (February 1986).. Richard Ross. External links [ ] • • demonstrates extremely high gate impedance with a simple LED circuit • Detailed description of usage of a similar MOSFET Datasheets •, NXP Semiconductors •, NXP Semiconductors •, On Semiconductor •, On Semiconductor.

FGPF4536 IGBT. Datasheet pdf. Equivalent Type Designator: FGPF4536 Type of IGBT Channel: N-Channel Maximum Collector-Emitter Voltage Vce , V: 360V Collector-Emitter saturation Voltage Vcesat , V: 1.59V Maximum Collector Current Ic , A: 50.0A Package: TO220F - IGBT Cross-Reference Search FGPF4536 Datasheet (PDF) 1.1. Size:713K _fairchild_semi August 2010 FGPF4536 360V, PDP IGBT Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new series of • Low saturation voltage: VCE (sat) =1.59 V @ IC = 50 A trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are • High input impedance essential. • Fast switching • RoHS compliant A 3.1. Size:313K _fairchild_semi August 2010 FGPF4533 330V, PDP IGBT Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applica- • Low saturation voltage: VCE (sat) =1.55 V @ IC = 50 A tions where low conduction and switching losses are essential. • High input impedance • Fast switching • RoHS compliant 5.1.

Size:419K _fairchild_semi August 2010 FGPF4633 330V PDP IGBT Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applica- • Low saturation voltage: VCE(sat) = 1.55 V @ IC = 70A tions where low conduction and switching losses are essential. • High input impedance • Fast switching • RoHS compliant Datasheet:,,,,,,,,,,,,,,,,.